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IHW30N120R
Soft Switching Series
q
C
IGBT with monolithic body diode for soft switching Applications
Features: * Powerful monolithic Body Diode * Specified for TJmax = 175C * Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior * NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) * Low EMI 1 * Qualified according to JEDEC for target applications * Pb-free lead plating; RoHS compliant Applications: * Inductive Cooking * Soft Switching Applications Type IHW30N120R VCE 1200V IC 30A VCE(sat),Tj=25C 1.55V Tj,max 175C Marking H30R120 Package PG-TO-247-3-21
G
E
PG-TO-247-3-21
Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area (VCE 1200V, Tj 175C) Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Diode surge non repetitive current, tp limited by Tjmax TC = 25C, tp = 10ms, sine halfwave TC = 25C, tp 2.5s, sine halfwave TC = 100C, tp 2.5s, sine halfwave Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms) Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Ptot Tj Tstg IFpul s IFSM Symbol VCE IC Value 1200 60 30 90 90 Unit V A
ICpul s IF
50 25 75 50 130 120 20 25 395 -40...+175 -55...+175 260 W C V
VGE
1
J-STD-020 and JESD-022 1 Rev. 2.2 May 06
Power Semiconductors
IHW30N120R
Soft Switching Series
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Thermal resistance, junction - ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 5 00 A VCE(sat) V G E = 15 V , I C = 30 A T j =2 5 C T j =1 2 5 C T j =1 7 5 C Diode forward voltage VF V G E = 0V , I F = 1 5 A T j =2 5 C T j =1 2 5 C T j =1 7 5 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 0. 7m A, VCE=VGE V C E = 12 0 0V, V G E = 0V T j =2 5 C T j =1 7 5 C Gate-emitter leakage current Transconductance Integrated gate resistor Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Ciss Coss Crss QGate LE V C E = 25 V , V G E = 0V , f= 1 MH z V C C = 96 0 V, I C =3 0 A V G E = 15 V 13 nH 2573 76 17 197 nC pF IGES gfs RGint V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 30 A 26 None 5 2500 100 nA S 5.1 1.3 1.35 1.4 5.8 1.5 6.4 A 1.55 1.75 1.85 1.75 1200 V Symbol Conditions Value min. Typ. max. Unit RthJA 40 RthJCD 0.37 RthJC 0.38 K/W Symbol Conditions Max. Value Unit
q
Power Semiconductors
2
Rev. 2.2
May 06
IHW30N120R
Soft Switching Series
q
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =2 5 C , V C C = 60 0 V, I C = 3 0 A V G E = 0 /1 5 V, R G = 34 , 1) L = 18 0 nH , 2) C = 3 9p F Energy losses include "tail" and diode reverse recovery. 71 37 1007 45 2.9 2.9 mJ ns Symbol Conditions Value min. typ. max. Unit
Switching Characteristic, Inductive Load, at Tj=175 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =1 7 5 C V C C = 60 0 V, I C = 3 0 A, V G E = 0 /1 5 V, R G = 3 4 , 2) L =1 8 0n H, 2) C = 3 9p F Energy losses include "tail" and diode 2 reverse recovery 67 54 1157 59 4.3 4.3 mJ ns Symbol Conditions Value min. typ. max. Unit
1 2
Leakage inductance L a n d Stray capacity C due to dynamic test circuit in Figure E. Diode used in this test is Diode of IDP30E120 3 Rev. 2.2 May 06
Power Semiconductors
IHW30N120R
Soft Switching Series
q
tp=1s
100A
80A
TC=80C TC=110C
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
20s 10A 50s
60A
40A
200s 1A
Ic
20A
1ms 10ms DC
0A 10Hz
100Hz
1kHz
10kHz
100kHz
1V
10V
100V
1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency for hard switching (turn-off) (Tj 175C, D = 0.5, VCE = 600V, VGE = 0/+15V, RG = 34)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. IGBT Safe operating area (D = 0, TC = 25C, Tj 175C;VGE=15V)
350W 300W 250W 200W 150W 100W 50W 0W 25C
50A
IC, COLLECTOR CURRENT
Ptot, DISSIPATED POWER
40A
30A
20A
10A
50C
75C
100C
125C
150C
0A 25C
50C
75C
100C 125C
150C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 175C)
TC, CASE TEMPERATURE Figure 4. DC Collector current as a function of case temperature (VGE 15V, Tj 175C)
Power Semiconductors
4
Rev. 2.2
May 06
IHW30N120R
Soft Switching Series
q
80A 70A VGE=20V
80A 70A VGE=20V 15V 13V 11V 9V 40A 30A 20A 10A 0V 1V 2V 3V 0A 0V 1V 2V 3V 4V 7V
IC, COLLECTOR CURRENT
60A 50A 40A 30A 20A 10A 0A
IC, COLLECTOR CURRENT VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
15V 13V 11V 9V 7V
60A 50A
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175C)
50A
2.5V
IC=60A
IC, COLLECTOR CURRENT
40A
2.0V
IC=30A
30A
1.5V IC=15A 1.0V
20A TJ=175C 10A 25C
0.5V
0A
0V
2V
4V
6V
8V
0.0V -50C
0C
50C
100C
150C
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V)
TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
Power Semiconductors
5
Rev. 2.2
May 06
IHW30N120R
Soft Switching Series
q
1s
td(off)
1s
t, SWITCHING TIMES
t, SWITCHING TIMES
td(off)
100ns
tf
td(on) tr 10ns
100ns
tf
tr
td(on)
10A 20A 30A 40A 50A
10 20 30 40 50 60 70
0A
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175C, VCE=600V, VGE=0/15V, RG=34, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=175C, VCE=600V, VGE=0/15V, IC=30A, Dynamic test circuit in Figure E)
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
1s td(off)
6V
t, SWITCHING TIMES
5V
max. typ.
4V
min.
100ns tf td(on) tr 0C 50C 100C 150C
3V
2V -50C
0C
50C
100C
150C
TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=30A, RG=34, Dynamic test circuit in Figure E)
TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.7mA)
Power Semiconductors
6
Rev. 2.2
May 06
IHW30N120R
Soft Switching Series
q
8mJ
5 mJ
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
6mJ
4 mJ
3 mJ
4mJ
Eoff
2 mJ
2mJ
Eoff
1 mJ
0mJ 10A 20A 30A 40A 50A
0 mJ
5 10
20
30
40
50
60
70
IC, COLLECTOR CURRENT Figure 13. Typical turn-off energy as a function of collector current (inductive load, TJ=175C, VCE=600V, VGE=0/15V, RG=34, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 14. Typical turn-off energy as a function of gate resistor (inductive load, TJ=175C, VCE=600V, VGE=0/15V, IC=30A, Dynamic test circuit in Figure E)
4mJ
5mJ
E, SWITCHING ENERGY LOSSES
3mJ E off 2mJ
E, SWITCHING ENERGY LOSSES
4mJ
3mJ Eoff 2mJ
1mJ
1mJ
0mJ 50C 100C 150C
0mJ 400V
500V
600V
700V
800V
TJ, JUNCTION TEMPERATURE Figure 15. Typical turn-off energy as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=30A, RG=34, Dynamic test circuit in Figure E)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical turn-off energy as a function of collector emitter voltage (inductive load, TJ=175C, VGE=0/15V, IC=30A, RG=34, Dynamic test circuit in Figure E)
Power Semiconductors
7
Rev. 2.2
May 06
IHW30N120R
Soft Switching Series
q
Ciss
1nF
VGE, GATE-EMITTER VOLTAGE
240V 960V
c, CAPACITANCE
10V
100pF
Coss
5V
Crss
0V
10pF
0nC 50nC 100nC 150nC 200nC 250nC
0V
10V
20V
QGE, GATE CHARGE Figure 17. Typical gate charge (IC=30 A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz)
ZthJC, TRANSIENT THERMAL RESISTANCE
D=0.5
ZthJC, TRANSIENT THERMAL RESISTANCE
D=0.5
-1
10 K/W
0.2 0.1 0.05 0.02
R,(K/W) 0.1221 0.1241 0.0977 0.0248
R1
10 K/W
-1
0.2
0.1 0.05 0.02 0.01
R,(K/W) 0.1746 0.118 0.0855
R1
, (s) 2.98*10-2 3.2*10-3 3.15*10-4
R2
10 K/W
-2
0.01
, (s) 6.16*10-2 6.91*10-3 5.43*10-4 3.12*10-5
R2
single pulse
single pulse 10 K/W 10s
-2
C 1 = 1 /R 1
C 2 = 2 /R 2
C 1 = 1 /R 1
C 2 = 2 /R 2
100s
1ms
10ms
100ms
1s
10s
100s
1ms
10ms 100ms
tP, PULSE WIDTH Figure 19. IGBT transient thermal resistance (D = tp / T)
tP, PULSE WIDTH Figure 20. Typical Diode transient thermal impedance as a function of pulse width (D=tP/T)
Power Semiconductors
8
Rev. 2.2
May 06
IHW30N120R
Soft Switching Series
q
1.5V I =20A F
20A
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
TJ=25C 175C
10A 7.5A
1.0V
10A
0.5V
0A
0V
1V
0.0V
-50C
0C
50C
100C
150C
VF, FORWARD VOLTAGE Figure 21. Typical diode forward current as a function of forward voltage
TJ, JUNCTION TEMPERATURE Figure 22. Typical diode forward voltage as a function of junction temperature
Power Semiconductors
9
Rev. 2.2
May 06
IHW30N120R
Soft Switching Series
q
PG-TO247-3-21
Power Semiconductors
10
Rev. 2.2
May 06
IHW30N120R
Soft Switching Series
i,v diF /dt tr r =tS +tF Qr r =QS +QF IF tS QS tr r tF 10% Ir r m t VR
q
Ir r m
QF
dir r /dt 90% Ir r m
Figure C. Definition of diodes switching characteristics
1
Tj (t) p(t)
r1
r2
2
n
rn
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit Leakage inductance L =180nH an d Stray capacity C =39pF.
Power Semiconductors
11
Rev. 2.2
May 06
IHW30N120R
Soft Switching Series
q
Edition 2006-01 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 5/10/06. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Power Semiconductors
12
Rev. 2.2
May 06

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